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STI11NM60ND |
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| Part Number | STI11NM60ND |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | - O S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using t(s) AM01475v1_noZen MDmesh II technology. Utilizing a new strip-layout vertical structure, this device feature... |
| Features |
TAB
Order code
VDS at TJ max.
RDS(on) max.
ID
STI11NM60ND
650 V
450 mΩ
10 A
t(s) 1 2 3 uc I²PAK rod D(2, TAB)
• Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ruggedness te P Applications le • Switching applications so G(1) b Description - O S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using t(s) AM01475v1_noZen MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is... |
| Document |
 STI11NM60ND Data Sheet
PDF 602.85KB |
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Desde 2024. D4U Semiconductor.
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