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STI13NM60N |
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| Part Number | STI13NM60N |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to ... |
| Features |
3 12 TO-220FP
TAB
1 23 I2PAK
TAB
TO-220
1 23
3 12
IPAK
Order codes
VDS
RDS(on) max.
STF13NM60N
STI13NM60N STP13NM60N
600 V
360 mΩ
STU13NM60N
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance ID 11 A D(2, TAB) Applications • Switching applications G(1) S(3) NG1D2TS3 Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest onresistance and gate char... |
| Document |
 STI13NM60N Data Sheet
PDF 455.98KB |
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Desde 2024. D4U Semiconductor.
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