| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STF45N10F7 VDS 100 V RDS(on) max.(1) 0.018 Ω ID 30 A PTOT 25 W 1. @ VGS = 10 V • Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Figure 1. Internal schematic diagram ' Description th This d |
|
|
|
|
STMicroelectronics |
N-Channel Power MOSFET Order code STP315N10F7 VDS 100 V RDS(on)max 2.7 mΩ ID 180 A Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) Features Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID PTOT STF5N105K5 1050 V 3.5 Ω 3 A 25 W Worldwide best FOM (figure of merit) Ultra low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This N-channel Zene |
|
|
|
|
STMicroelectronics |
Power MOSFET Type STB85N15F4 STP85N15F4 ■ ■ ■ VDSS 150 V 150 V RDS(on) max < 0.019 Ω < 0.019 Ω ID 85 A 85 A 3 1 1 2 3 Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche tested D²PAK TO-220 Application ■ Switching applications |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes STD45N10F7 STI45N10F7 STP45N10F7 VDS RDS(on) max.(1) 100 V 0.018 Ω 1. @ VGS = 10 V • Ultra low on-resistance • 100% avalanche tested ID 45 A PTOT 60 W Applications • Switching applications Description These devices utilize the 7t |
|
|
|
|
STMicroelectronics |
Power MOSFET Type STB85N15F4 STP85N15F4 ■ ■ ■ VDSS 150 V 150 V RDS(on) max < 0.019 Ω < 0.019 Ω ID 85 A 85 A 3 1 1 2 3 Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche tested D²PAK TO-220 Application ■ Switching applications |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes STD45N10F7 STI45N10F7 STP45N10F7 VDS RDS(on) max.(1) 100 V 0.018 Ω 1. @ VGS = 10 V • Ultra low on-resistance • 100% avalanche tested ID 45 A PTOT 60 W Applications • Switching applications Description These devices utilize the 7t |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes STD45N10F7 STI45N10F7 STP45N10F7 VDS RDS(on) max.(1) 100 V 0.018 Ω 1. @ VGS = 10 V • Ultra low on-resistance • 100% avalanche tested ID 45 A PTOT 60 W Applications • Switching applications Description These devices utilize the 7t |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS RDS(on) max STD85N10F7AG 100 V 0.010 Ω ID 70 A PTOT 85 W • Designed for automotive applications and AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immu |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID PTOT STP5N105K5 1050 V 3.5 Ω 3 A 85 W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) AM01476v1 Worldwide best FOM (figure of merit) Ultra low gate charge 100% avalanche tested Zener-protected |
|
|
|
|
STMicroelectronics |
Automotive-grade N-channel MOSFET Order code VDS STL115N10F7AG 100 V RDS(on) max 6 mΩ ID PTOT 107 A 136 W AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applicati |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET Order code VDS RDS(on) max. ID STP65N150M9 650 V 150 mΩ 20 A • Worldwide best FOM RDS(on)*Qg among silicon-based devices • Higher VDSS rating • Higher dv/dt capability • Excellent switching performance • Easy to drive • 100% avalanche tested |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID PTOT STF5N105K5 1050 V 3.5 Ω 3 A 25 W Worldwide best FOM (figure of merit) Ultra low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This N-channel Zene |
|
|
|
|
STMicroelectronics |
N-Channel Power MOSFET Type VDSS RDS(on) ID PW STP5N120 1200 V < 3.5 Ω 4.7 A 160 W t(s) ■ 100% avalanche tested ■ Extremely high dv/dt capability uc ■ ESD improved capability rod ■ New high voltage benchmark ■ Gate charge minimized lete PApplication o ■ Switching applicat |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code STH315N10F7-2 STH315N10F7-6 VDS 100 V RDS(on) max. 2.3 mΩ • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 180 A G(1) |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code STH315N10F7-2 STH315N10F7-6 VDS 100 V RDS(on) max. 2.3 mΩ • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 180 A G(1) |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET STH85N15F4-2 STP85N15F4 N-channel 150 V, 0.015 Ω, 85 A TO-220, H2PAK STripFET™ DeepGATE™ Power MOSFET Preliminary data Type VDSS RDS(on) max ID STH85N15F4-2 )STP85N15F4 150 V 150 V < 18.6 mΩ < 19 mΩ t(s ■ Extremely low on-resistance RDS(on) u |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STP315N10F7 VDS 100 V RDS(on)max 2.7 mΩ ID 180 A Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) Features Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STP165N10F4 VDSS 100 V RDS(on) max ID < 5.5 mΩ 120 A ■ N-channel enhancement mode ■ 100% avalanche rated ■ Low gate charge ■ Very low on-resistance Application Switching applications Description The STP165N10F4 is an N-channel enha |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes STD25N10F7 STF25N10F7 STP25N10F7 VDSS 100 V 100 V 100 V RDS(on) max.(1) 0.035 Ω 0.035 Ω 0.035 Ω ID 25 A 19 A 25 A PTOT 40 W 25 W 50 W 1. @ VGS = 10 V • Ultra low on-resistance • 100% avalanche tested Applications • Switching applic |
|
Desde 2024. D4U Semiconductor.
|