STP65N150M9 |
Part Number | STP65N150M9 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | S(3) AM01476v1_tab This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The si... |
Features |
Order code
VDS
RDS(on) max.
ID
STP65N150M9
650 V
150 mΩ
20 A
• Worldwide best FOM RDS(on)*Qg among silicon-based devices • Higher VDSS rating • Higher dv/dt capability • Excellent switching performance • Easy to drive • 100% avalanche tested • Zener-protected G(1) Applications • High efficiency switching applications Description S(3) AM01476v1_tab This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain ma... |
Document |
STP65N150M9 Data Sheet
PDF 228.51KB |
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