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STD85N10F7AG |
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| Part Number | STD85N10F7AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charg... |
| Features |
Order code
VDS
RDS(on) max
STD85N10F7AG 100 V 0.010 Ω
ID 70 A
PTOT 85 W
• Designed for automotive applications and AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Figure 1. Internal schematic diagram Applications • Switching applications ' 7$% * Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faste... |
| Document |
 STD85N10F7AG Data Sheet
PDF 485.50KB |
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Desde 2024. D4U Semiconductor.
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