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STF45N10F7 |
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| Part Number | STF45N10F7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | th This device utilizes the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. *... |
| Features |
Order code STF45N10F7
VDS 100 V
RDS(on) max.(1) 0.018 Ω
ID 30 A
PTOT 25 W
1. @ VGS = 10 V
• Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Figure 1. Internal schematic diagram ' Description th This device utilizes the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. * 6 $0Y Order codes STF45N10F7 Table 1. Device summary Marking Package 45N10F7 TO-220FP Packaging Tube November 2013 This is information o... |
| Document |
 STF45N10F7 Data Sheet
PDF 790.74KB |
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Desde 2024. D4U Semiconductor.
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