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STI45N10F7 |
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| Part Number | STI45N10F7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3... |
| Features |
Order codes
STD45N10F7 STI45N10F7 STP45N10F7
VDS
RDS(on) max.(1)
100 V 0.018 Ω
1. @ VGS = 10 V
• Ultra low on-resistance • 100% avalanche tested ID 45 A PTOT 60 W Applications • Switching applications Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 !-V Order codes STD45N10F7 STI45N10F7 STP45N10F7 Table 1. Device summary Marking Package 45N10F7 DPAK I2PAK TO-220 Packaging Tape and reel Tube October 2013 Th... |
| Document |
 STI45N10F7 Data Sheet
PDF 1.13MB |
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Desde 2024. D4U Semiconductor.
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