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STH315N10F7-6 |
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| Part Number | STH315N10F7-6 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate char... |
| Features |
Order code STH315N10F7-2 STH315N10F7-6
VDS 100 V
RDS(on) max. 2.3 mΩ
• AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 180 A G(1) S(2, 3) for H2PAK-2 G(1) S(2, 3, 4, 5, 6, 7) for H 2PAK-6 N-CHG1DTABS23_2_6 Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and mor... |
| Document |
 STH315N10F7-6 Data Sheet
PDF 446.25KB |
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