| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
P-Channel MOSFET • –5.5 A, –20 V RDS(ON) = 35 mΩ @ VGS = –4.5 V RDS(ON) = 50 mΩ @ VGS = –2.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) S D D SuperSOT TM-6 G D D Absolute Maximum Ratings TA=25oC unless otherwise noted |
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Fairchild Semiconductor |
MOSFET Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A Low Gate Charge High performance trench technology for extremely low rDS(on) RoHS Compliant S D D 1 PIN 1 G D D SuperSOTTM-6 2 3 Absolute Maxim |
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ON Semiconductor |
Dual N & P Channel Digital FET N-Ch 25 V, 0.22 A, RDS(ON) = 5 Ω @ VGS= 2.7 V. P-Ch 25 V, -0.12 A, RDS(ON) = 13 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body |
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Fairchild Semiconductor |
N-Channel MOSFET Max rDS(on) = 43mΩ at VGS = –4.5V, ID = –4.5A Max rDS(on) = 68mΩ at VGS = –2.5V, ID = –3.8A Low gate charge (8nC typical). High performance trench technology for extremely low rDS(on). SuperSOTTM –6 package:small footprint (72% smaller than |
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Fairchild Semiconductor |
Complementary PowerTrench MOSFET • • • • • Q1 –4.2 A, –20V. RDS(ON) = 55 mΩ @ VGS = – 4.5 V RDS(ON) = 82 mΩ @ VGS = – 2.5 V Q2 5.9 A, 20V. RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V Low gate charge High performance trench technology for extremely low RDS(ON). FLMP S |
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Fairchild Semiconductor |
Integrated Load Switch •V DROP DROP V = 0.2V @ V = 12V, I =2.5 A. R = 0.08 Ω IN L (ON) = 0.2V @ V = 5V,I = 1.6 A. R = 0.125 Ω. IN L (ON) • Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6kV Human Body Model). • High performance PowerTrenchTM technolo |
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Fairchild Semiconductor |
P-Channel MOSFET -4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V Fast switching speed. Low gate charge (7.2nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% s |
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Fairchild Semiconductor |
N-Channel MOSFET Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS Compliant General Description This N-Channel MOSFET is prod |
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Fairchild Semiconductor |
12V P-Channel PowerTrench MOSFET This complementary P-Channel MOSFET with SyncFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for providing an extremel |
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ON Semiconductor |
P-Channel MOSFET Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.9A Max rDS(on) = 75mΩ at VGS = –4.5V, ID = –3.7A Low gate charge (17nC typical). High performance trench technology for extremely low rDS(on). SuperSOTTM –6 package: small footprint (72% smaller tha |
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ON Semiconductor |
N-Channel MOSFET • Shielded Gate MOSFET Technology • Max RDS(on) = 109 mW at VGS = 10 V, ID = 2.7 A • Max RDS(on) = 176 mW at VGS = 6 V, ID = 2.1 A • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability in a Widely |
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ON Semiconductor |
P-Channel MOSFET • −3.5 A, −20 V RDS(ON) = 80 mW @ VGS = −4.5 V RDS(ON) = 110 mW @ VGS = −2.5 V • Low Gate Charge (7.2 nC Typical) • High Performance Trench Technology for Extremely Low RDS(ON) Applications • Battery Management • Load Switch • Battery Protection ABS |
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Fairchild Semiconductor |
N-Channel MOSFET • 1.4 A, 150 V. • • • • RDS(ON) = 425 mΩ @ VGS = 10 V RDS(ON) = 475 mΩ @ VGS = 6 V Applications • DC/DC converter High performance trench technology for extremely low RDS(ON) Low gate charge (8nC typ) High power and current handling capability Fast |
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Fairchild Semiconductor |
N-Channel MOSFET • 3.0 A, 80 V RDS(ON) = 77 mΩ @ VGS = 10 V RDS(ON) = 88 mΩ @ VGS = 6 V Applications • DC/DC converter • High performance trench technology for extremely low RDS(ON) • Low gate charge (13nC typ) • High power and current handling capability • Fast sw |
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Fairchild Semiconductor |
60V P-Channel Logic Level PowerTrench MOSFET • –3 A, –60 V. RDS(ON) = 0.105 Ω @ VGS = –10 V RDS(ON) = 0.135 Ω @ VGS = –4.5 V Applications • DC-DC converters • Load switch • Power management • Fast switching speed • High performance trench technology for extremely low RDS(ON) D D S 1 2 G |
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Fairchild Semiconductor |
P-Channel 1.8V Specified PowerTrench MOSFET • –5 A, –20 V. RDS(ON) = 44 mΩ @ VGS = –4.5 V RDS(ON) = 64 mΩ @ VGS = –2.5 V RDS(ON) = 95 mΩ @ VGS = –1.8 V • Low gate charge, High Power and Current handling capability • High performance trench technology for extremely low RDS(ON) • FLMP SSOT-6 pac |
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Fairchild Semiconductor |
Dual N-Channel MOSFET • 2.7 A, 20 V. RDS(ON) = 0.08 Ω @ VGS = 4.5 V RDS(ON) = 0.12 Ω @ VGS = 2.5 V • • • • Low gate charge (3.5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% sma |
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Fairchild Semiconductor |
Dual N & P Channel / Digital FET N-Ch 25 V, 0.22 A, RDS(ON) = 5 Ω @ VGS= 2.7 V. P-Ch 25 V, -0.46 A, RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body |
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Fairchild Semiconductor |
Integrated Load Switch VDROP=0.2V @ VIN=5V, IL=2.8A. R(ON) = 0.07Ω VDROP=0.2V @ VIN=2.5V, IL=1.9A. R(ON) = 0.105Ω. Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human Body Model). High performance trench technology for extremely low on-resistance. |
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Fairchild Semiconductor |
30V N & P-Channel PowerTrench MOSFETs • Q1 2.5 A, 30V. RDS(ON) = 95 mΩ @ VGS = 10 V RDS(ON) = 150 mΩ @ VGS = 4.5 V • Q2 –2.0 A, 30V. RDS(ON) = 150 mΩ @ VGS = –10 V RDS(ON) = 220 mΩ @ VGS = –4.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON). • SuperSOT |
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Desde 2024. D4U Semiconductor.
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