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FDC642P Fairchild Semiconductor P-Channel MOSFET Datasheet

FDC642P Trans MOSFET P-CH 20V 4A 6-Pin SuperSOT T/R (Alt: FDC642P)


Fairchild Semiconductor
FDC642P
Part Number FDC642P
Manufacturer Fairchild Semiconductor
Description This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipati...
Features • • • • • -4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V Fast switching speed. Low gate charge (7.2nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). Applications • Load switch • Battery protection • Power management D D S 1 6 2 5 SuperSOT -6 TM D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed TA = 25°C unless otherwise no...

Document Datasheet FDC642P datasheet pdf (269.68KB)
Distributor Distributor
Avnet Asia
Stock 0 In Stock
Price
300000 units: 0.14447 USD
150000 units: 0.14795 USD
60000 units: 0.1516 USD
30000 units: 0.15544 USD
18000 units: 0.15744 USD
12000 units: 0.15948 USD
6000 units: 0.16158 USD
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FDC642P Distributor

onsemi
FDC642P
MOSFET, P-CH, -20V, -4A, SOT-23-6
45000 units: 229 KRW
24000 units: 231 KRW
9000 units: 234 KRW
3000 units: 237 KRW
500 units: 272 KRW
100 units: 432 KRW
10 units: 610 KRW
5 units: 729 KRW
Distributor
element14 Asia-Pacific

5934 In Stock
BuyNow BuyNow
onsemi
FDC642P
Trans MOSFET P-CH 20V 4A 6-Pin SuperSOT T/R (Alt: FDC642P)
300000 units: 0.14447 USD
150000 units: 0.14795 USD
60000 units: 0.1516 USD
30000 units: 0.15544 USD
18000 units: 0.15744 USD
12000 units: 0.15948 USD
6000 units: 0.16158 USD
Distributor
Avnet Asia

0 In Stock
BuyNow BuyNow
onsemi
FDC642P
MOSFETs SSOT-6 P-CH -20V
1 units: 0.54 USD
10 units: 0.469 USD
100 units: 0.327 USD
500 units: 0.253 USD
1000 units: 0.201 USD
3000 units: 0.175 USD
9000 units: 0.163 USD
24000 units: 0.159 USD
45000 units: 0.158 USD
Distributor
Mouser Electronics

3261 In Stock
BuyNow BuyNow
onsemi
FDC642P
Trans MOSFET P-CH 20V 4A 6-Pin TSOT-23 T/R
45000 units: 0.157 USD
30000 units: 0.1579 USD
24000 units: 0.1582 USD
9000 units: 0.1616 USD
6000 units: 0.1718 USD
3000 units: 0.172 USD
Distributor
Arrow Electronics

3000 In Stock
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onsemi
FDC642P
MOSFET, Fairchild, FDC642P, RL
1500 units: 3.416 HKD
760 units: 3.469 HKD
Distributor
RS

3000 In Stock
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onsemi
FDC642P
Trans MOSFET P-CH 20V 4A 6-Pin TSOT-23 T/R
1000 units: 0.5061 USD
500 units: 0.5092 USD
250 units: 0.5122 USD
100 units: 0.5152 USD
37 units: 0.5183 USD
Distributor
Verical

2098 In Stock
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onsemi
FDC642P
P-Channel 20 V 0.065 Ω Surface Mount Specified PowerTrench Mosfet - SSOT-6
15000 units: 0.158 USD
12000 units: 0.162 USD
9000 units: 0.164 USD
6000 units: 0.166 USD
3000 units: 0.169 USD
Distributor
Future Electronics

0 In Stock
BuyNow BuyNow
part
Fairchild Semiconductor Corporation
FDC642P
FDC642P - P-Channel PowerTrench MOSFET, -20V, -4A, 100m
1000 units: 0.1698 USD
500 units: 0.1798 USD
100 units: 0.1878 USD
25 units: 0.1958 USD
1 units: 0.1998 USD
Distributor
Rochester Electronics

91 In Stock
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Fairchild Semiconductor Corporation
FDC642P
MOSFET Transistor, P-Channel, TSOP
271 units: 0.1554 USD
73 units: 0.222 USD
1 units: 0.333 USD
Distributor
Quest Components

975 In Stock
BuyNow BuyNow
part
Fairchild Semiconductor Corporation
FDC642P
P-CHANNEL 2.5 V SPECIFIED POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
No price available
Distributor
ComSIT Asia

2145 In Stock
No Longer Stocked





FDC642P Similar Datasheet

Part Number Description
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This Dual N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 3.0 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V • Low Gate Charge (3.3 nC) • High Performance Trench Technology for Extremely Low RDS(ON) • High Power and Current Handling Capability • This is a Pb−Free and Halide Free Device Applications • DC/DC Converter • Battery Protection • Power Management ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS V...
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These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features • Q1 3.0 A, 20V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V • Q2 –2.2 A, 20V. RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 190 mΩ @ VGS = –2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON). • SuperSOT –6 package: small footprint (72...
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„ Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A „ Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A „ Fast switching speed „ Low gate charge (11nC typical) „ High performance trench technology for extremely low rDS(on) „ SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1 mm thick) „ Termination is Lead-free and RoHS Compliant This P-Channel 2.5V specified MOSFET is produced using ON Semicondcutor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small foot...
FDC642P-F085
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MOSFET – P-Channel, POWERTRENCH -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P Features • Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A • Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A • Fast Switching Speed • Low Gate Charge (6.9 nC Typical) • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick) • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoHS Compliant Applications • Load Switch • Battery Protection • Power management www.onsemi.com TSOT23 6−Lead CASE 419BL MARKING DIAGRAM &E&Y &.642&G 1 XXX = Specific Device Code &E = Space Designator &Y = Year of Pr...
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MOSFET – P-Channel, POWERTRENCH -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P Features • Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A • Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A • Fast Switching Speed • Low Gate Charge (6.9 nC Typical) • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick) • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoHS Compliant Applications • Load Switch • Battery Protection • Power management www.onsemi.com TSOT23 6−Lead CASE 419BL MARKING DIAGRAM &E&Y &.642&G 1 XXX = Specific Device Code &E = Space Designator &Y = Year of Pr...




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