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FDC5614P |
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| Part Number | FDC5614P |
| Manufacturer | Fairchild Semiconductor |
| Description | This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • –3 A, –60 V. RDS(ON) = 0.105 Ω @ VGS = –10 V RDS(ON) =... |
| Features |
• –3 A, –60 V. RDS(ON) = 0.105 Ω @ VGS = –10 V RDS(ON) = 0.135 Ω @ VGS = –4.5 V Applications • DC-DC converters • Load switch • Power management • Fast switching speed • High performance trench technology for extremely low RDS(ON) D D S 1 2 G 6 5 4 SuperSOT TM -6 D D 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings –60 ±20 (Note 1a) Units V V A W °C –3 –20 1.6 0.8 –55 to +150 (Note 1a) (Note 1b) Operating and Storag... |
| Document |
 FDC5614P Data Sheet
PDF 140.43KB |
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