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FDC8601 |
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| Part Number | FDC8601 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for RDS(on), switching performance and ruggedn... |
| Features |
• Shielded Gate MOSFET Technology • Max RDS(on) = 109 mW at VGS = 10 V, ID = 2.7 A • Max RDS(on) = 176 mW at VGS = 6 V, ID = 2.1 A • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability in a Widely Used Surface Mount Package • Fast Switching Speed • 100% UIL Tested • This Device is Pb−Free, Halide Free and is RoHS Compliant Applications • Load Switch • Synchronous Rectifier • Primary Switch MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain ... |
| Document |
 FDC8601 Data Sheet
PDF 385.00KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC8601 |
Fairchild Semiconductor |
N-Channel Shielded Gate PowerTrench MOSFET |
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| 2 | FDC8602 |
ON Semiconductor |
Dual N-Channel MOSFET |
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| 3 | FDC8602 |
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Dual N-Channel Shielded Gate PowerTrench MOSFET |
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| 4 | FDC86244 |
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| 5 | FDC86244 |
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| 6 | FDC855N |
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|
Desde 2024. D4U Semiconductor.
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