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FDC634P |
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| Part Number | FDC634P |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This P−Channel 2.5 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features • −3.5 A, −20 V RDS(ON) = 80 mW @ VGS = −... |
| Features |
• −3.5 A, −20 V RDS(ON) = 80 mW @ VGS = −4.5 V RDS(ON) = 110 mW @ VGS = −2.5 V • Low Gate Charge (7.2 nC Typical) • High Performance Trench Technology for Extremely Low RDS(ON) Applications • Battery Management • Load Switch • Battery Protection ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage −20 V VGSS Gate−Source Voltage ±8 V ID Drain Current − Continuous (Note 1a) −3.5 A − Pulsed −20 A PD Maximum Power (Note 1a) Dissipation (Note 1b) 1.6 W 0.8 W TJ, TSTG Operating and Storage Junction Temperature R... |
| Document |
 FDC634P Data Sheet
PDF 340.25KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC634P |
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P-Channel MOSFET |
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| 2 | FDC6301N |
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| 3 | FDC6301N |
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| 4 | FDC6302P |
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| 5 | FDC6302P |
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| 6 | FDC6303N |
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Desde 2024. D4U Semiconductor.
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