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| Part Number | FDC6301N |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | FDC6301N |
| Manufacturer | ON Semiconductor |
| Title | Dual N-Channel Digital FET |
| Description | These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage appl. |
| Features |
• 25 V, 0.22 A Continuous, 0.5 A Peak ♦ RDS(on) = 5 W @ VGS = 2.7 V ♦ RDS(on) = 4 W @ VGS = 4.5 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V • Gate−Source Zener for ESD Ruggedness. >6 kV Human Body Model • This is a Pb−Free and Halide Free Device DATA SHEET www.onsemi.com D2 S1 D1 G2 G1S2 TSOT23 6−Lead SUPERSOTt−6 CASE 419BL MARKING DIAGRAM. |
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| 4 | FDC6304P |
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| 6 | FDC6305N |
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| 7 | FDC6305N |
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| 8 | FDC6306P |
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| 9 | FDC6308P |
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| 10 | FDC6310P |
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Desde 2024. D4U Semiconductor.
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