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| Part Number | FDC6304P |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | FDC6304P |
| Manufacturer | ON Semiconductor |
| Title | Dual P-Channel MOSFET |
| Description | These P-Channel enhancement mode field effect transistor are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application . |
| Features | -25 V, -0.46 A continuous, -1.0 A Peak. RDS(ON) = 1.5 Ω @ VGS= -2.7 V RDS(ON) = 1.1 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model. SOT-23 SuperSOTTM-6 Mark: .304 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 4 3 5 2 6 1 Absolute Maximum Ratings TA = 25oC unless other w. |
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| 3 | FDC6302P |
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| 4 | FDC6302P |
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| 5 | FDC6303N |
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| 6 | FDC6305N |
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| 7 | FDC6305N |
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| 8 | FDC6306P |
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| 9 | FDC6308P |
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| 10 | FDC6310P |
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Desde 2024. D4U Semiconductor.
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