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FDC6304P |
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| Part Number | FDC6304P |
| Manufacturer | Fairchild Semiconductor |
| Description | These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state... |
| Features |
-25 V, -0.46 A continuous, -1.0 A Peak. RDS(ON) = 1.5 Ω @ VGS= -2.7 V RDS(ON) = 1.1 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model.
SOT-23
SuperSOTTM-6 Mark: .304
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
4
3
5
2
6
1
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
TA = 25oC unless other wise noted FDC6304P -25 -8 Units V V A
- Continuous - Pulsed
-0.46 -1
(Note 1a) (Note 1b)
Maximum... |
| Document |
 FDC6304P Data Sheet
PDF 74.28KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC6304P |
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Dual P-Channel MOSFET |
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| 2 | FDC6301N |
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| 3 | FDC6301N |
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| 4 | FDC6302P |
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| 5 | FDC6302P |
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| 6 | FDC6303N |
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Desde 2024. D4U Semiconductor.
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