Part Number | FDC6305N |
Distributor | Stock | Price | Buy |
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Part Number | FDC6305N |
Manufacturer | ON Semiconductor |
Title | Dual N-Channel MOSFET |
Description | These N−Channel low threshold 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance. Features • N−Channel 2.7 A, 20 V RDS(ON) = 0.08 W @ VG. |
Features |
• N−Channel 2.7 A, 20 V RDS(ON) = 0.08 W @ VGS = 4.5 V RDS(ON) = 0.12 W @ VGS = 2.5 V • Fast Switching Speed • Low Gate Charge (3.5 nC Typical) • High Performance Trench Technology for Extremely Low RDS(ON) • SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick) • This is a Pb−Free Device Applications • DC/DC Converter • Load Switch • Motor Driving DATA S. |
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