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FDC602P |
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| Part Number | FDC602P |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive vol... |
| Features |
• –5.5 A, –20 V RDS(ON) = 35 mΩ @ VGS = –4.5 V RDS(ON) = 50 mΩ @ VGS = –2.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) S D D SuperSOT TM-6 G D D Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Maximum Power Dissipation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJ C Thermal Resistance, Junction-to-Case ... |
| Document |
 FDC602P Data Sheet
PDF 86.64KB |
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Desde 2024. D4U Semiconductor.
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