| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
FQI9N50C • • • • • • 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 24 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " ! S |
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ON Semiconductor |
N-Channel MOSFET • 7.4 A, 600 V, RDS(on) = 1.0 W (Max.) @ VGS = 10 V, ID = 3.7 A • Low Gate Charge (Typ. 29 nC) • Low Crss (Typ. 16 pF) • 100% Avalanche Tested • This Device is Pb−Free, Halide Free and is RoHS Compliant MAXIMUM RATINGS (TC = 25°C, unless otherwise n |
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Fairchild Semiconductor |
800V N-Channel MOSFET 0+,((82 9 '(( %% 17 7% 1 ±;( ) & & & ) = & = )6 A A A68 8 8 : ) 9 &! < &! *!& |
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Fairchild Semiconductor |
60V N-Channel MOSFET • • • • • • • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK |
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Fairchild Semiconductor |
450V N-Channel MOSFET • • • • • • 6.2A, 450V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! |
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Fairchild Semiconductor |
900V N-Channel MOSFET • • • • • • 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • • 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-P |
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Fairchild Semiconductor |
200V N-Channel MOSFET • • • • • • 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " ! |
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Fairchild Semiconductor |
150V N-Channel MOSFET , 6 6 , = 6 = !$ ; , 1.2*:4 1.&++:4 ; &*+ &' ( && ' '* ' ± |
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Fairchild Semiconductor |
250V N-Channel MOSFET • • • • • • 2.8A, 250V, RDS(on) = 2.2Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 4.7 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series |
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Fairchild Semiconductor |
400V N-Channel MOSFET 1,%&73 1,/))73 9 ()) %& / &8 /) ±-) * ' ' ' * < ' < *6 ? ? ?67 7 7 : * |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 3.0A, 600V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 10 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! |
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Fairchild Semiconductor |
60V P-Channel MOSFET • • • • • • • -47A, -60V, RDS(on) = 0.026Ω @VGS = -10 V Low gate charge ( typical 84 nC) Low Crss ( typical 320 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S ! ● ● ▶ ▲ ● S D |
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Fairchild Semiconductor |
900V N-Channel MOSFET • 4.2 A, 900 V, RDS(on) = 3.3 Ω (Max.) @ VGS = 10 V, ID = 2.1 A • Low Gate Charge (Typ. 24 nC) • Low Crss (Typ. 9.5 pF) • 100% Avalanche Tested D GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS |
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Fairchild Semiconductor |
300V N-Channel MOSFET -7&84 2-0**84 9 )** &' )' 70 : ±)* + ( ( ( + = ( = +$ A A A$8 8 8 ; + 9 (! < |
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Fairchild Semiconductor |
400V N-Channel MOSFET 0+6&71 0+,((71 9 %(( %& 6 8% ,8 ±;( ) ' ' ' ) > ' > )5 A A A57 7 7 : ) |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 5.0A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 9.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! |
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Fairchild Semiconductor |
800V N-Channel MOSFET • • • • • • 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series ! |
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Fairchild Semiconductor |
80V N-Channel MOSFET • • • • • • • 70A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 180 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PA |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • • 57A, 100V, RDS(on) = 0.023Ω @VGS = 10 V Low gate charge ( typical 85 nC) Low Crss ( typical 150 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-P |
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Desde 2024. D4U Semiconductor.
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