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FQI7N10 |
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| Part Number | FQI7N10 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize ... |
| Features |
• • • • • • • 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB7N10 / FQI7N10 100 7.3 5.15 29.2 ± 25 (Note 2) (Note 1) (Note 1) (N... |
| Document |
 FQI7N10 Data Sheet
PDF 548.34KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQI7N10L |
Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET |
|
| 2 | FQI7N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 3 | FQI7N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 4 | FQI7N30 |
Fairchild Semiconductor |
300V N0Channel MOSFET |
|
| 5 | FQI7N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 6 | FQI7N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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