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| Part Number | FQI7N60 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | FQI7N60 |
| Manufacturer | Fairchild Semiconductor |
| Title | 600V N-Channel MOSFET |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy . |
| Features |
• 7.4 A, 600 V, RDS(on) = 1.0 Ω (Max.) @VGS = 10 V, ID = 3.7 A • Low Gate Charge (Typ. 29 nC) • Low Crss (Typ. 16 pF) • 100% Avalanche Tested D D G S D2-PAK GDS I2-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Dra. |
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Desde 2024. D4U Semiconductor.
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