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FQI7N60 |
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| Part Number | FQI7N60 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state r... |
| Features |
• 7.4 A, 600 V, RDS(on) = 1.0 W (Max.) @ VGS = 10 V, ID = 3.7 A • Low Gate Charge (Typ. 29 nC) • Low Crss (Typ. 16 pF) • 100% Avalanche Tested • This Device is Pb−Free, Halide Free and is RoHS Compliant MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter FQB7N60TM FQI7N60TU Unit VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain−Source Voltage Drain Current − Continuous (TC = 25°C) − Continuous (TC = 100°C) Drain Current − Pulsed (Note 1) Gate−Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery ... |
| Document |
 FQI7N60 Data Sheet
PDF 398.68KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQI7N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 2 | FQI7N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET |
|
| 3 | FQI7N10L |
Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET |
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| 4 | FQI7N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 5 | FQI7N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 6 | FQI7N30 |
Fairchild Semiconductor |
300V N0Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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