FQI7N60 |
Part Number | FQI7N60 |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
Features |
• 7.4 A, 600 V, RDS(on) = 1.0 Ω (Max.) @VGS = 10 V, ID = 3.7 A • Low Gate Charge (Typ. 29 nC) • Low Crss (Typ. 16 pF) • 100% Avalanche Tested D D G S D2-PAK GDS I2-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (T... |
Document |
FQI7N60 Data Sheet
PDF 885.94KB |
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