Busque con el número de pieza junto con el fabricante o la descripción
FQI4N90 |
Click to view a larger image
| Part Number | FQI4N90 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
| Features |
• 4.2 A, 900 V, RDS(on) = 3.3 Ω (Max.) @ VGS = 10 V, ID = 2.1 A • Low Gate Charge (Typ. 24 nC) • Low Crss (Typ. 9.5 pF) • 100% Avalanche Tested D GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) - D... |
| Document |
 FQI4N90 Data Sheet
PDF 803.63KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQI4N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 2 | FQI4N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 3 | FQI4N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET |
|
| 4 | FQI4N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 5 | FQI4N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 6 | FQI4N60 |
Oucan Semi |
600V 4A N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|