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| Part Number | FQI4N60 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | FQI4N60 |
| Manufacturer | Fairchild Semiconductor |
| Title | 600V N-Channel MOSFET |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i. |
| Features |
• • • • • • 4.4A, 600V, RDS(on) = 2.2Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 8.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Conti. |
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Desde 2024. D4U Semiconductor.
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