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FQI6N90 |
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| Part Number | FQI6N90 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize ... |
| Features |
• • • • • • 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB6N90 / FQI6N90 900 5.8 3.7 23.2 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°... |
| Document |
 FQI6N90 Data Sheet
PDF 596.45KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQI6N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET |
|
| 2 | FQI6N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET |
|
| 3 | FQI6N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 4 | FQI6N40C |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 5 | FQI6N45 |
Fairchild Semiconductor |
450V N-Channel MOSFET |
|
| 6 | FQI6N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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