FQI5N60 |
Part Number | FQI5N60 |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • 5.0A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 9.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB5N60 / FQI5N60 600 5.0 3.15 20 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W ... |
Document |
FQI5N60 Data Sheet
PDF 554.00KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQI5N60C |
ON Semiconductor |
N-Channel MOSFET | |
2 | FQI5N60C |
Fairchild Semiconductor |
600V N-channel MOSFET | |
3 | FQI5N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET | |
4 | FQI5N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
5 | FQI5N20 |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
6 | FQI5N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |