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NXP Semiconductors |
MOSFET and benefits • Fast switching • Trench MOSFET technology • Low threshold voltage • Ultra thin package profile of 0.37mm height 1.3 Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 1.4 Quick reference dat |
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NXP Semiconductors |
single N-channel Trench MOSFET and benefits • Fast switching • Trench MOSFET technology • Low threshold voltage • Ultra thin package profile of 0.37mm height 1.3 Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 1.4 Quick reference dat |
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NXP |
single P-channel Trench MOSFET and benefits Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV Ultra thin package profile of 0.37 mm 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching cir |
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NXP Semiconductors |
N-channel TrenchMOS extremely low level FET I Profile 55 % lower than SOT23 I Low on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Low threshold voltage I Fast switching 1.3 Applications I Driver circuits I DC-to-DC converters I Load switching in portable appliances |
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NXP Semiconductors |
P-channel Trench MOSFET and benefits • • • • Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω 3. Applications • • • • Re |
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NXP Semiconductors |
N-channel TrenchMOS standard level FET and benefits Fast switching Low conduction losses due to low on-state resistance Saves PCB space due to small footprint (90 % smaller than SOT23) Suitable for use in compact designs due to low profile (55 % lower than SOT23) 1.3 Applications |
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NXP |
P-channel Trench MOSFET and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small SMD package: 1.0 x 0.6 x 0.48 mm 3. Applications • Relay driver • High-speed line driv |
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NXP |
N-channel Trench MOSFET and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm 3. Applications • Relay driver • High-speed li |
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NXP |
N-channel Trench MOSFET and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed l |
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NXP |
P-channel Trench MOSFET and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 1.8 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed |
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NXP |
N-channel Trench MOSFET and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed li |
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NXP |
N-channel Trench MOSFET and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Leadless ultra small package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed line driver • |
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NXP |
N-channel Trench MOSFET and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Ultra thin package profile of 0.37 mm 3. Applications • Relay driver • High-speed line driver • Low-side lo |
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NXP |
N-channel Trench MOSFET and benefits • • • • Trench MOSFET technology Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ 3. Applications • • • • Relay driver High |
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NXP Semiconductors |
N-channel TrenchMOS extremely low level FET I Profile 55 % lower than SOT23 I Lower on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Low threshold voltage I Fast switching 1.3 Applications I Driver circuits I DC-to-DC converters I Load switching in portable applianc |
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NXP Semiconductors |
single N-channel Trench MOSFET and benefits Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV Ultra thin package profile of 0.37mm 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circu |
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NXP Semiconductors |
single P-channel Trench MOSFET and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • 1.8 kV ESD protected 1.3 Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 1.4 Quick reference data Table 1. Symbol |
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NXP Semiconductors |
N-channel TrenchMOS standard level FET I Profile 55 % lower than SOT23 I Low on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Low threshold voltage I fast switching 1.3 Applications I Driver circuits I DC-to-DC converters I Load switching in portable appliances |
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NXP Semiconductors |
N-channel TrenchMOS standard level FET I Profile 55 % lower than SOT23 I Low on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Fast switching I Standard level compatible threshold 1.3 Applications I Driver circuits I Load switching in portable appliances 1.4 Qu |
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NXP Semiconductors |
MOSFET and benefits Very fast switching Trench MOSFET technology Low threshold voltage Ultra thin package profile with 0.37 mm height ESD protection up to 2 kV 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switc |
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Desde 2024. D4U Semiconductor.
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