PMZ290UNE2 |
Part Number | PMZ290UNE2 |
Manufacturer | NXP (https://www.nxp.com/) |
Description | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and bene... |
Features |
• Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 1.2 A; Tj = 25 °C Min Typ Max Uni... |
Document |
PMZ290UNE2 Data Sheet
PDF 221.67KB |
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