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| Part Number | PMZ290UNE2 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | PMZ290UNE2 |
| Manufacturer | nexperia |
| Title | N-channel MOSFET |
| Description | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discha. |
| Features |
and benefits
• Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source volt. |
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| 1 | PMZ290UNE |
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| 2 | PMZ290UNE |
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Desde 2024. D4U Semiconductor.
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