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PMZ950UPE |
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| Part Number | PMZ950UPE |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and bene... |
| Features |
• • • • Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω 3. Applications • • • • Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -500 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ - Max -20 8 -500 Unit V V mA Stat... |
| Document |
 PMZ950UPE Data Sheet
PDF 228.47KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | PMZ950UPE |
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| 2 | PMZ950UPEL |
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Desde 2024. D4U Semiconductor.
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