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PMZ290UNE |
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| Part Number | PMZ290UNE |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and bene... |
| Features |
• Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 500 mA; Tj = 25 °C [1] Min Typ ... |
| Document |
 PMZ290UNE Data Sheet
PDF 210.08KB |
Similar Datasheet
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| 1 | PMZ290UNE |
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Desde 2024. D4U Semiconductor.
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