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PMZB670UPE |
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| Part Number | PMZB670UPE |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. SO T8 1.2 Featur... |
| Features |
Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV Ultra thin package profile of 0.37 mm 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance Conditions Tj = 25 °C www.DataSheet.net/ Min -8 [1] Typ 0.67 Max -20 8 -680 0.85 Unit V V mA Ω VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -400 mA; Tj = 25 °C - Static c... |
| Document |
 PMZB670UPE Data Sheet
PDF 1.02MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PMZB670UPE |
nexperia |
single P-channel Trench MOSFET |
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| 2 | PMZB600UNE |
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N-channel Trench MOSFET |
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| 3 | PMZB600UNE |
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N-channel MOSFET |
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| 4 | PMZB600UNEL |
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N-channel MOSFET |
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| 5 | PMZB1200UPE |
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| 6 | PMZB1200UPE |
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P-channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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