NXP BU5 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BU505	NXP	Silicon diffused power transistors power dissipation fall time see Fig.3 see Fig.3 Tmb ≤ 25 °C; see Fig.4 inductive load; see Fig.7 VBE = 0 open base IC = 2 A; IB = 900 mA IF = 2 A CONDITIONS − − − − − − − − 0.9 TYP. MAX. 1500 700 1 1.8 2 2.5 4 75 − V V V V A A A W µs UNIT THERMAL C
2	BU506D	NXP	Silicon diffused power transistors DC) collector current (peak value) total power dissipation fall time see Fig.2 see Fig.2 Tmb ≤ 25 °C; see Fig.3 inductive load; see Fig.9 VBE = 0 open base IC = 3 A; IB = 1.33 A; see Fig.6 IF = 3 A; see Fig.10 CONDITIONS − − − 1.5 − − − − 0.7 TYP. MA
3	BU508AW	NXP	Silicon Diffused Power Transistor ollector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE =
4	BU508DF	NXP	Silicon Diffused Power Transistor he Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base c
5	BU506	NXP	Silicon diffused power transistors DC) collector current (peak value) total power dissipation fall time see Fig.2 see Fig.2 Tmb ≤ 25 °C; see Fig.3 inductive load; see Fig.9 VBE = 0 open base IC = 3 A; IB = 1.33 A; see Fig.6 IF = 3 A; see Fig.10 CONDITIONS − − − 1.5 − − − − 0.7 TYP. MA
6	BU505D	NXP	Silicon diffused power transistors power dissipation fall time see Fig.3 see Fig.3 Tmb ≤ 25 °C; see Fig.4 inductive load; see Fig.7 VBE = 0 open base IC = 2 A; IB = 900 mA IF = 2 A CONDITIONS − − − − − − − − 0.9 TYP. MAX. 1500 700 1 1.8 2 2.5 4 75 − V V V V A A A W µs UNIT THERMAL C
7	BU505DF	NXP	Silicon diffused power transistors ) collector saturation current collector current (DC) collector current (peak value) total power dissipation fall time see Figs 4 and 5 see Figs 4 and 5 Th ≤ 25 °C; see Fig.2 inductive load; see Fig.10 VBE = 0 open base IC = 2 A; IB = 900 mA; see Fig
8	BU505F	NXP	Silicon diffused power transistors ) collector saturation current collector current (DC) collector current (peak value) total power dissipation fall time see Figs 4 and 5 see Figs 4 and 5 Th ≤ 25 °C; see Fig.2 inductive load; see Fig.10 VBE = 0 open base IC = 2 A; IB = 900 mA; see Fig
9	BU506DF	NXP	Silicon diffused power transistors e load; see Fig.11 VBE = 0 open base CONDITIONS DESCRIPTION base collector emitter 1 2 3 MBC668 BU506F; BU506DF 2 2 1 MBB008 1 3 MBB077 3 a. BU506F. b. BU506DF. Front view Fig.1 Simplified outline (SOT186) and symbols. TYP. − − − 1.5 − − − −
10	BU506F	NXP	Silicon diffused power transistors e load; see Fig.11 VBE = 0 open base CONDITIONS DESCRIPTION base collector emitter 1 2 3 MBC668 BU506F; BU506DF 2 2 1 MBB008 1 3 MBB077 3 a. BU506F. b. BU506DF. Front view Fig.1 Simplified outline (SOT186) and symbols. TYP. − − − 1.5 − − − −
11	BU508AF	NXP	Silicon Diffused Power Transistor Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperatur
12	BU508AX	NXP	Silicon Diffused Power Transistor Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperatur
13	BU508DW	NXP	Silicon Diffused Power Transistor ting System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Tota
14	BU508DX	NXP	Silicon Diffused Power Transistor Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base curr