BU506F |
Part Number | BU506F |
Manufacturer | NXP (https://www.nxp.com/) |
Description | High-voltage, high-speed switching NPN power transistor in a SOT186 package. The BU506DF has an integrated efficiency diode. APPLICATIONS • Horizontal deflection circuits of colour television receiver... |
Features |
e load; see Fig.11 VBE = 0 open base CONDITIONS DESCRIPTION base collector emitter
1 2 3
MBC668
BU506F; BU506DF
2 2 1
MBB008
1 3
MBB077
3
a. BU506F.
b. BU506DF.
Front view
Fig.1 Simplified outline (SOT186) and symbols.
TYP. − − − 1.5 − − − − 0.7
MAX. 1500 700 1 2.2 3 5 8 20 −
UNIT V V V V A A A W µs
IC = 3 A; IB = 1.33 A; see Figs 7 and 8 IF = 3 A
THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. 1997 Aug 14 1 PARAMETER CONDITION... |
Document |
BU506F Data Sheet
PDF 83.18KB |
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