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BU506 |
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| Part Number | BU506 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The BU506D has an integrated efficiency diode. BU506; BU506D 2 2 APPLICATIONS • Horizontal deflection circuits of col... |
| Features |
DC) collector current (peak value) total power dissipation fall time see Fig.2 see Fig.2 Tmb ≤ 25 °C; see Fig.3 inductive load; see Fig.9 VBE = 0 open base IC = 3 A; IB = 1.33 A; see Fig.6 IF = 3 A; see Fig.10 CONDITIONS − − − 1.5 − − − − 0.7 TYP. MAX. 1500 700 1 − 3 5 8 100 − V V V V A A A W µs UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.25 UNIT K/W
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134)... |
| Document |
 BU506 Data Sheet
PDF 77.39KB |
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