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BU508DW |
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| Part Number | BU508DW |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK RE... |
| Features |
ting System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 700 8 15 4 6 125 150 150 UNIT V V A A A A W ˚C ˚C
Tmb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W
July 1998
1
Rev 1.200
Philip... |
| Document |
 BU508DW Data Sheet
PDF 67.35KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BU508D |
Multicomp |
Horizontal Deflection Transistors |
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| 2 | BU508D |
SavantIC |
SILICON POWER TRANSISTOR |
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| 3 | BU508D |
Philips |
Silicon Diffused Power Transistor |
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| 4 | BU508D |
USHA |
Silicon Power Transistor |
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| 5 | BU508DF |
NXP |
Silicon Diffused Power Transistor |
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| 6 | BU508DF |
Comset |
SILICON DIFFUSED POWER TRANSISTORS |
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Desde 2024. D4U Semiconductor.
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