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| Part Number | BU508DF |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BU508DF |
| Manufacturer | NXP |
| Title | Silicon Diffused Power Transistor |
| Description | High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emit. |
| Features | he Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 700 8 15 4 6 34 150 150 UNI. |
| Part Number | BU508DF |
| Manufacturer | CDIL |
| Title | NPN POWER TRANSISTORS |
| Description | Collector -Emitter Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Total Power Dissipation upto Ta=25º C Tc=25º C Storage Temperature Range Max Operating Junction Temperature THERMAL RESISTANCE Thermal Resistance Junction - Case SYMBOL VCES VCEO VEBO . |
| Features | =0 Emitter Base Voltage BU508F, AF IEBO VEB=5V, IC=0 Emitter Cut-off Current BU508DF hFE IC=4.5A, VCE=5V DC Current Gain VF IF=4.0A Diode forward Voltage BU508DF VCE(sat) * IC=4.5A, IB=2.0A Collector Emitter Saturation Voltage BU508AF, DF IC=4.5A, IB=2.0A BU508F Base Emitter Saturation Voltage VBE(sat) * IC=4.5A, IB=2.0A SWITCHING TIME Storage Time Fall Time MIN 700 5.0 TYP MAX 1.0 UNIT mA V V. |
| Part Number | BU508DF |
| Manufacturer | TRANSYS Electronics |
| Title | NPN POWER TRANSISTORS |
| Description | Collector -Emitter Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Total Power Dissipation upto Ta=25º C Tc=25º C Storage Temperature Range Max Operating Junction Temperature THERMAL RESISTANCE Thermal Resistance Junction - Case SYMBOL VCES VCEO VEBO . |
| Features | 08DF hFE IC=4.5A, VCE=5V DC Current Gain VF IF=4.0A Diode forward Voltage BU508DF VCE(sat) * IC=4.5A, IB=2.0A Collector Emitter Saturation Voltage BU508AF, DF IC=4.5A, IB=2.0A BU508F Base Emitter Saturation Voltage VBE(sat) * IC=4.5A, IB=2.0A SWITCHING TIME Storage Time Fall Time MIN 700 5.0 TYP MAX 1.0 UNIT mA V V mA 300 2.25 2.0 1.0 5.0 1.5 V V V V ts tf IC=4.5A,hFE=2.5,VCC=140V LC=0.9mH. |
| Part Number | BU508DF |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PFa package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB IBM Ptot Tj Tstg PARAMETER Colle. |
| Features | tter sustaining voltage IC=100mA ;IB=0,L=25mH IC=4.5A; IB=1.6A IC=4.5A ;IB=2A VEB=5V; IC=0 VCB=BVCBO IE=0 TC=125 IC=0.5A ; VCE=5V IC=0.1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IF=4.5A 700 V VCE(sat) VBE(sat) IEBO ICES hFE fT COB VF Collector-emitter saturation voltage 1.0 V Base-emitter saturation voltage 1.1 V Emitter cut-off current 300 1.0 2.0 10 30 mA Collector cut-off current mA DC c. |
| Part Number | BU508DF |
| Manufacturer | Comset Semiconductors |
| Title | SILICON DIFFUSED POWER TRANSISTORS |
| Description | SEMICONDUCTORS NPN BU508DF SILICON DIFFUSED POWER TRANSISTOR The BU508DF is a NPN epitaxial-base transistor in TO3PFa package with integrated efficiency diode. It is intended for high voltage, high-speed. Primarily for use in horizontal deflection circuits of colour television receivers. Compliance. |
| Features | o.kr/ SEMICONDUCTORS NPN BU508DF ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO ICES IEBO VCE(SAT) VBE(SAT) VF hFE COB fT Ratings Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter saturation Voltage Base-Emitter saturation Voltage Diode Forwardvoltage DC Current Gain Output Capacitance Transition Frequency Test Conditi. |
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|---|---|---|---|---|
| 1 | BU508D |
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