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BU508DF |
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| Part Number | BU508DF |
| Manufacturer | Comset Semiconductors |
| Description | SEMICONDUCTORS NPN BU508DF SILICON DIFFUSED POWER TRANSISTOR The BU508DF is a NPN epitaxial-base transistor in TO3PFa package with integrated efficiency diode. It is intended for high voltage, high-s... |
| Features |
o.kr/
SEMICONDUCTORS
NPN BU508DF
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO ICES IEBO VCE(SAT) VBE(SAT) VF hFE COB fT
Ratings
Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter saturation Voltage Base-Emitter saturation Voltage Diode Forwardvoltage DC Current Gain Output Capacitance Transition Frequency
Test Condition(s)
IC= 100 mA, IB=0 L= 25mH VBE =0, VCE = 1500 V VBE =0, VCE = 1500 V Tj =125°C VEB= 5 V, IC=0 IC= 4.5 A, IB= 1.6 A IC= 4.5 A, IB= 2 A IF= 4.5 A IC= 500 mA, VCE = 5 V VCB = 10 V, IE=0, f= 1MHz VCE=... |
| Document |
 BU508DF Data Sheet
PDF 159.38KB |
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Desde 2024. D4U Semiconductor.
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