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BU508DF |
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| Part Number | BU508DF |
| Manufacturer | Comset |
| Description | NPN BU508DF SILICON DIFFUSED POWER TRANSISTORS The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for the BU508DF). They are a high voltage, high spe... |
| Features |
it
K/W K/W K/W K/W
ISOLATION Symbol
VISOL CISOL
Ratings
Isolation Voltage from all terminals to external heatsink (peak value) Isolation capacitance from collector to external heatsink
Value
1500
Typ.
Unit
V pF
21
*
COMSET SEMICONDUCTORS
1/2
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICES VCE0(SUS) IEBO VCE(SAT) VBE(SAT) VF HFE fT Cc ts tf
Ratings
Collector Cutoff Current Collector-Emitter Sustaining Voltage Emitter Cutoff Current Collector-Emitter saturation Voltage Base-Emitter saturation Voltage Forward Voltage DC Current Gain Transition frequency Collector ... |
| Document |
 BU508DF Data Sheet
PDF 230.63KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | BU508D |
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| 2 | BU508D |
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| 3 | BU508D |
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| 4 | BU508D |
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| 5 | BU508DF |
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| 6 | BU508DF |
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Desde 2024. D4U Semiconductor.
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