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BU505D NXP Silicon diffused power transistors Datasheet


NXP
BU505D
Part Number BU505D
Manufacturer NXP (https://www.nxp.com/)
Description High-voltage, high-speed switching NPN power transistor in a TO-220AB package. The BU505D has an integrated efficiency diode. 2 BU505; BU505D 2 APPLICATIONS • Horizontal deflection circuits of colour television receivers. PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base em...
Features power dissipation fall time see Fig.3 see Fig.3 Tmb ≤ 25 °C; see Fig.4 inductive load; see Fig.7 VBE = 0 open base IC = 2 A; IB = 900 mA IF = 2 A CONDITIONS − − − − − − − − 0.9 TYP. MAX. 1500 700 1 1.8 2 2.5 4 75 − V V V V A A A W µs UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.67 UNIT K/W 1997 Aug 13 2 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM VCEO ICsat IC ICM IB IBM Ptot Tstg Tj PARAMETER...

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