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BU505DF NXP Silicon diffused power transistors Datasheet


NXP
BU505DF
Part Number BU505DF
Manufacturer NXP (https://www.nxp.com/)
Description High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. The BU505DF has an integrated efficiency diode. APPLICATIONS • Horizontal deflection circuits of colour television receivers. PINNING 1 2 3 MBC668 BU505F; BU505DF 2 2 1 MBB...
Features ) collector saturation current collector current (DC) collector current (peak value) total power dissipation fall time see Figs 4 and 5 see Figs 4 and 5 Th ≤ 25 °C; see Fig.2 inductive load; see Fig.10 VBE = 0 open base IC = 2 A; IB = 900 mA; see Fig.8 IF = 2 A CONDITIONS − − − − − − − − 0.7 TYP. MAX. 1500 700 1 1.8 2 2.5 4 20 − UNIT V V V V A A A W µs THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. 1997 Aug 13 2 PARAMETER CONDITIONS note ...

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