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Motorola |
MTB3N100E de speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ™ Data Sheet MTB3N100E Motorola Preferred Device TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM ® D G |
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Motorola |
TMOS POWER FET of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors ™ Data Sheet V™ MTB15N06V TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
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Motorola |
TMOS POWER FET r bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Robust High Voltage Termination • Avalanche Energy Specified • Source –to –Drain Diode Rec |
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Motorola |
TMOS POWER FET bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM ® D G CASE 418B –02, Style 2 D2PAK |
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Motorola |
TMOS POWER FET alanche Energy Specified • Source –to –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured — N |
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Motorola |
TMOS POWER FET cted voltage transients. • Avalanche Energy Specified • Source –to –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short |
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Motorola |
TMOS POWER FET of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors ™ Data Sheet V™ MTB52N06VL Motorola Preferred Device N –Channel Enhancement –Mode |
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Motorola |
MTB4N80E Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured — Not Sheared • Specially Designed Leadframe for Maximum Power Dissipation MTB4N80E1 Motor |
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Motorola |
TMOS POWER FET r bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM ® D G CASE 418B –02, Style 2 D2 |
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Motorola |
TMOS POWER FET alanche Energy Specified • Source –to –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured — N |
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Motorola |
TMOS POWER FET |
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Motorola |
TMOS POWER FET of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors Features Common to TMOS V and TMOS E –FETs • Avalanche Energy Specified • IDSS and V |
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Motorola |
TMOS POWER FET S POWER FET 36 AMPERES 60 VOLTS RDS(on) = 0.04 OHM ® D • Avalanche Energy Specified G • Source –to –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specifi |
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Motorola |
TMOS POWER FET alanche Energy Specified • Source –to –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured — N |
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Motorola |
TMOS POWER FET otorola Preferred Device TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS RDS(on) = 9 mOHM ™ D G • Avalanche Energy Specified • Source –to –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bri |
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Motorola |
TMOS POWER FET eared • Specially Designed Leadframe for Maximum Power Dissipation D MTB6N60E1 Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHM ® G CASE 418C –01, Style 2 D2PAK –SL S MAXIMUM RATINGS (TC = 25°C unless otherwise note |
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Motorola |
TMOS POWER FET cted voltage transients. • Avalanche Energy Specified • Source –to –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short |
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Motorola |
TMOS POWER FET ppressor –Absorbs High Energy in the Avalanche Mode • ESD Protected. Designed to Typically Withstand 400 V Machine Model and 4000 V Human Body Model. D MTB55N06Z TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mΩ ™ G CASE 418B –02, Style 2 D2PAK S |
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Motorola |
TMOS POWER FET of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors ™ Data Sheet V™ MTB52N06V Motorola Preferred Device N –Channel Enhancement –Mode S |
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Motorola |
TMOS POWER FET pected voltage transients. • Avalanche Energy Specified • Source –to –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Shor |
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Desde 2024. D4U Semiconductor.
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