MTB33N10E |
Part Number | MTB33N10E |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB33N10E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB33N10E Motorola Preferred Device N–C... |
Features |
alanche Energy Specified • Source –to –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured — Not Sheared • Specially Designed Leadframe for Maximum Power Dissipation • Available in 24 mm 13 –inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Dr... |
Document |
MTB33N10E Data Sheet
PDF 266.16KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MTB30N06EL |
Motorola Semiconductor |
TMOS Power FET | |
2 | MTB30N06ELT4 |
Motorola Semiconductor |
TMOS Power FET | |
3 | MTB30N06VL |
Motorola |
TMOS POWER FET | |
4 | MTB30N06VL |
ON Semiconductor |
Power MOSFET | |
5 | MTB30P06V |
Motorola |
TMOS POWER FET | |
6 | MTB30P06V |
ON Semiconductor |
Power MOSFET |