Part Number | MTB30P06V |
Distributor | Stock | Price | Buy |
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Part Number | MTB30P06V |
Manufacturer | Motorola |
Title | TMOS POWER FET |
Description | MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB30P06V/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than double. |
Features |
of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors ™ Data Sheet V™ MTB30P06V Motorola Preferred Device P –Channel Enhancement –Mode Silicon Gate TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TM D G S CASE 418B –02, Style 2 D2PAK Features Common to TMOS V and TMOS E –FET. |
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2 | MTB30N06ELT4 |
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3 | MTB30N06VL |
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TMOS POWER FET | |
4 | MTB30N06VL |
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5 | MTB33N10E |
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6 | MTB35N04J3 |
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7 | MTB35N04J3 |
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8 | MTB36N06E |
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9 | MTB36N06V |
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10 | MTB36N06V |
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