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MTB30P06V |
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| Part Number | MTB30P06V |
| Manufacturer | Motorola |
| Description | MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB30P06V/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS V is a new technology designed to achieve an on–r... |
| Features |
of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors ™ Data Sheet V™ MTB30P06V Motorola Preferred Device P –Channel Enhancement –Mode Silicon Gate TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TM D G S CASE 418B –02, Style 2 D2PAK Features Common to TMOS V and TMOS E –FETS • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E –FET • Surface Mount Package Available in 16 mm 13 –inch/2... |
| Document |
 MTB30P06V Data Sheet
PDF 247.61KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTB30P06V |
ON Semiconductor |
Power MOSFET |
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| 2 | MTB30N06EL |
Motorola Semiconductor |
TMOS Power FET |
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| 3 | MTB30N06ELT4 |
Motorola Semiconductor |
TMOS Power FET |
|
| 4 | MTB30N06VL |
Motorola |
TMOS POWER FET |
|
| 5 | MTB30N06VL |
ON Semiconductor |
Power MOSFET |
|
| 6 | MTB33N10E |
Motorola |
TMOS POWER FET |
|
Desde 2024. D4U Semiconductor.
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