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MTB6N60E1 |
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| Part Number | MTB6N60E1 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB6N60E1/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This adva... |
| Features |
eared • Specially Designed Leadframe for Maximum Power Dissipation D MTB6N60E1 Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHM ® G CASE 418C –01, Style 2 D2PAK –SL S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Drain –to –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (1) Ope... |
| Document |
 MTB6N60E1 Data Sheet
PDF 160.57KB |
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Desde 2024. D4U Semiconductor.
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