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4N80E |
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| Part Number | 4N80E |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB4N80E1/D Product Preview TMOS E-FET .™ High Energy Power FET D 2 PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This h... |
| Features |
Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured — Not Sheared • Specially Designed Leadframe for Maximum Power Dissipation MTB4N80E1 Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM ® D G CASE 418C –01, Style 2 D2PAK –SL S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain C... |
| Document |
 4N80E Data Sheet
PDF 142.90KB |
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