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| Part Number | 4N80 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 4N80 |
| Manufacturer | nELL |
| Title | N-Channel Power MOSFET |
| Description | (4A, 800Volts) The Nell 4N80 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. such as switched mode power s. |
| Features | RDS(ON) = 3.6Ω @ VGS = 10V Ultra low gate charge(25nC max.) Low reverse transfer capacitance (CRSS = 9pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (4N80A) GDS TO-220F (4N80AF) D (Drain) G (Gate) PRODUCT SUMMARY ID (A) 4 VDSS (V) 800 RDS(ON) (Ω) 3.6 @ VGS = 10V QG(nC) max. 25 S (Source) ABS. |
| Part Number | 4N80 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high efficiency switch mode power supply. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER . |
| Features | TERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IF=4A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.0A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 800V; VGS= 0 tr Rise Time td(on) Turn. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 4N80-FC |
UTC |
N-CHANNEL POWER MOSFET |
|
| 2 | 4N80-FCQ |
UTC |
800V N-CHANNEL POWER MOSFET |
|
| 3 | 4N80-N |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 4 | 4N80E |
Motorola |
MTB4N80E |
|
| 5 | 4N03L02 |
Infineon |
Power-Transistor |
|
| 6 | 4N041R1 |
Infineon |
Power-Transistor |
|
| 7 | 4N04R7 |
Infineon |
Power-Transistor |
|
| 8 | 4N04R8 |
Infineon |
Power-Transistor |
|
| 9 | 4N0607 |
VBsemi |
TO220 N-Channel MOSFET |
|
| 10 | 4N0607 |
VBsemi |
TO252 N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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