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4N0607 |
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| Part Number | 4N0607 |
| Manufacturer | VBsemi |
| Description | 4N0607-VB TO220 4N0607-VB TO220 Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A Single FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: TO-220AB D www.VBsemi.com G GDS S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherw. |
| Features |
• 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: TO-220AB D www.VBsemi.com G GDS S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 120 90 Pulsed Drain Current IDM 350 A Continuous Source Current (Diode Conduction) IS 70a Avalanche Current IAS 50 Single Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH EAS 125 mJ Maximum Power Dissipation TC = 25 °C TA = 25 °C PD 136 3b, 8.. |
| Datasheet |
 4N0607 Data Sheet
PDF 253.81KB |
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4N0607 |
| Part Number | 4N0607 |
| Manufacturer | VBsemi |
| Title | TO252 N-Channel MOSFET |
| Description | 4N0607-VB TO252 4N0607-VB TO252 Datasheet N-Channel 60 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 60 0.0050 0.0120 97 Single FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 . |
| Features |
• TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested TO-252 GDS Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb . |
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| 2 | 4N041R1 |
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| 3 | 4N04R7 |
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| 4 | 4N04R8 |
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| 5 | 4N10 |
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| 6 | 4N100 |
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| 7 | 4N100-FC |
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| 8 | 4N100-FCQ |
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| 9 | 4N120 |
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| 10 | 4N135-P |
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